Del Mar Photonics

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Semiconductor saturable absorber mirrors as mode-locking device for femtosecond lasers: nonlinear Fabry朠erot resonator approach

I. G. Poloyko* and V. L. Kalashnikov
International Laser Center, 65 Skorina Ave., Bldg. 17, Minsk 220027, Belarus

We propose an analytical model for ultra-short pulse generation in CW solid-state lasers with semiconductor saturable absorber-based modulators, that regards such a modulator as a nonlinear Fabry朠erot interferometer. The ways to control ultrashort pulse parameters through the modulator's parameters are shown. A stability analysis of the solutions obtained is performed.

Author Keywords: Ultrashort pulse generation; Solid-state laser; Semiconductor saturable absorber; Nonlinear interferometer
 

Del Mar Photonics

Saturable Absorber Mirrors samples for Optics and Photonics 2008 - come to see!

Saturable Absorber Mirror - Saturable Absorber Mirror brochure - buy online

Saturable absorber mirrors are Bragg-mirrors with AlAs/GaAs quarter-wave stacks, grown on GaAs wafers with one or more low temperature GaAs (LT-GaAs) or InGaAs films as saturable absorbers. Patented semi-resonant allows to meet the requirements of different passively mode-locked laser applications in the picosecond and femtosecond region. The saturable absorptance of the fast response films of LT-GaAs can be adjusted in a wide region.

Saturable Absorber Mirror

SAM-1550-23-12.7s saturable absorber mirror, λ = 1550 nm, absorption 23 %, modulation depth 21 %, relaxation time 2 ps, chip size 4mm x 4mm, soldered on the edge of a copper heat sink with 12.7 mm diameter

SAM-1040-1-25.4s saturable absorber mirror, λ = 1040 nm, absorption 1 %, modulation depth 0.5 %, relaxation time 500 fs, chip size 4mm x 4mm, soldered on the center of a copper heat sink with 25.4 mm diameter

SAM-1064-2-25.4g saturable absorber mirror, λ = 1064 nm, absorption 2 %, modulation depth 1.2 %, relaxation time 500 fs, chip size 4mm x 4mm, glued on the edge of a copper heat sink with 25.4 mm diameter

SAM-1300-4-12.7g saturable absorber mirror,  = 1300 nm, absorption 4 %, modulation depth 2.5 %, relaxation time 500 fs, chip size 4mm x 4mm, glued on the edge of a copper heat sink with 12.7 mm diameter

Saturable Absorber Mirror
SAM NOTE: All prices are subject to change due to a currency fluctuations! E-mail for quote with current prices. SAM?- Saturable Absorber Mirror
Saturable absorber mirrors are Bragg-mirrors with AlAs/GaAs quarter-wave stacks, grown on GaAs wafers with one or more low temperature GaAs (LT-GaAs) or InGaAs films as saturable absorbers. With semi-resonant design we meet the requirements of different passively mode-locked laser applications in the picosecond and femtosecond region. The saturable absorptance of the fast response films of LT-GaAs can be adjusted with a design in a wide region.
Prices are subject to change without notice.
Delivery time 1-2 weeks unless stated otherwise.
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760 nm

800 nm

940 nm

980 nm

1040 nm

1064 nm

1150 nm

1300 nm

1510 nm

1550 nm
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