Del Mar Photonics

Ultrafast laser-induced crystallization of amorphous silicon films
Tae Y. Choi
Swiss Federal Institute of Technology Zurich
Institute of Energy Technology
CH-8092, Switzerland
David J. Hwang
Costas P. Grigoropoulos
University of California
Department of Mechanical Engineering
Berkeley, California 94720-1740

Abstract. Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy
(AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.


Subject terms: ultrashort; amorphous silicon; pump and probe; ultrafast phase transition; crystallization.

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